Power MOSFET Design Engineer (Silicon and SiC)

Key Responsibilities:

．Responsible for the design and optimization of Silicon and/or Silicon Carbide (SiC) Power MOSFET devices for applications across a wide voltage range.
．Utilize TCAD, SPICE, finite element analysis (FEA) software, and layout design tools for device simulation, performance evaluation, and layout verification.
．Collaborate closely with process integration, layout, product, and QRA teams to drive new product development and mass production.
．Prepare technical documentation and deliver design presentations in project meetings.
．Support customer inquiries.

Qualifications:

．Master's degree or above in Electrical Engineering, Electronics, Materials Science, Physics, or related fields.
．Over 5 years of experience in Power MOSFET or discrete device design.
．Proficient in TCAD simulation tools such as Synopsys Sentaurus, and Silvaco.

Preferred Qualifications:

．Experience in designing Trench, Planar, or Shielded Gate Trench (SGT) structures, and ESD protection devices.
．Experience in mass production ramp-up or supporting wafer foundry projects.
．Prior involvement in automotive or industrial applications is a plus.
．Familiar with SPICE modeling and finite element analysis tools (e.g., COMSOL, Ansys).

Requirements

學歷：碩士以上