Senior RF Design Engineer: High-Power GaN/GaAs Frontend in , United States
This position is no longer accepting applications (closed Oct 26, 2026).
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Description
A leading semiconductor company is seeking a talented Senior RF Design Engineer to design high power RF switches and amplifiers utilizing wide bandgap technologies, such as GaN and GaAs. The ideal candidate will have a Master’s degree and 3-5 years of RF design experience. You will work collaboratively within a team to develop innovative solutions for Military communications and consumer applications. Tagore offers competitive compensation and benefits, fostering growth and innovation within a dynamic team environment.
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